eBook - ePub

Handbook of Thin Film Process Technology

Name: Handbook of Thin Film Process Technology
Author: D Glocker

98/2 Recipes for Optical Materials

D Glocker,

135 pages
English
ePUB (mobile friendly)
Available on iOS & Android

eBook - ePub

Handbook of Thin Film Process Technology

98/2 Recipes for Optical Materials

D Glocker,

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About This Book

The Handbook of Thin Film Process Technology is a practical handbook for the thin film scientist, engineer and technician. This handbook is regularly updated with new material, and this volume presents additional recipe-type information (i.e. important deposition system details and process parameters) for optical materials.

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Information

Publisher

CRC Press

Year

2018

ISBN

9781351089692

Edition

Topic

Physical Sciences

Subtopic

Physics

Index

Physics

Index

II-VI semiconductor superlattices F6.2:1

III-V compound D1.0:2, D1.0:8, D2.1:3, D2.4:5

III-V compound semiconductors B1.1:1, B1.1:12, D1.2:1, D2.0:1

III-V films A2.2:17 III-V materials B1.4:34

III-V semiconductor D2.1:1

III-V semiconductor superlattices F6.2:1

III-V substrates A2.2:17

IV-VI semiconductor superlattices F6.2:1

ALE of covalent (elemental) materials B1.5:2

ALE processing B1.5:3

ALE sequences B1.5:1

Abeyant sheath A3.1:17

Ablation lasers A1.5:2

Ablative photo-decomposition (APD) A1.5:2

Abnormal glow A3.0:2

Absorption D2.4:1

Absorption index F5:9

AC sputtering A5.2:2, A5.2:7

reactive A5.2:2

Acceptor D2.4:5

transitions D2.4:5

Acoustic impedance D4.0:2

Activation energy B1.5:4, B1.5:5, B1.5:7, F7:11

Activation energy barrier A2.3:2

Active storage environments E1.0:19

Adatom incorporation D1.0:5

Adatom migration D1.0:7

Additive C1.0:5

ALE growth B1.5:6

pattern transfer C 1.0:3

Adhesion B1.2:5, B1.2:9, D0:2, E3.0:4

enhancement E3.0:5, E3.0:10-12

failure B1.2:9

strength E3.1:19

Adiabatic temperature F7:9

Afterglow reactors B1.2:11

Aksenov device A1.4:12

Al_xGa_1-xAs D1.2:2, D1.2:3, D2.3:4

AlAs A2.0:17, D2.3:5

AlAs_xSb_1-x D1.2:3

AlAs/GaAs superlattice D2.3:5

(Al, Ga)As A2.0:2

AlGaAs A2.0:17, A2.1:7, A2.3:5

AlInAs A2.0:17

AlSb A2.0:17

Alarm system A2.2:15

Alkaline cleaners E1.0:6

Alkane-based plasma chemistries Cl. 1:14

Allotropic forms A2.2:3

Alloy clustering D2.4:7

Alloy composition D0:6, D0:9, D1.2:1, D1.2:3, D2.0:3, D2.0:6, D2.3:4, D2.4:1

Alloy content D0:2

Alloy decomposition F1:7

Alloy reduced energy E2.2:9

Alternating current (AC) A5.2:1

Ambipolar diffusion A3.1:4, B1.2:13

Amorphous hydrogenated carbon films (a-C:H) X3.15:1

Amorphous hydrogenated oxygenated carbon films (a-C:O:H) X3.15:1

Amorphous thin films X3.5:9

Amperian sheet currents A3.2:5

Ancillary magnetic fields A3.2:21

Angle-resolved XPS (ARXPS) E3.1:11, E3.1:13, E3.1:18

Angular dependence of etch yields C1.2:3

Anisitropic etching C1.0:7, C1.1:3, C1.1:11

Anisotropic magnetoresistance (AMR) X5.0:14

Anisotropy C1.1:1

Antiphase domains A2.0:30

Antiphase boundaries D1.0:3

Arc evaporation A1.4:1

Arc evaporation sources A1.4:7

ac A1.4:7

dc A1.4:7

filtered A1.4:7

pulsed A1.4:7

steered A1.4:7

Arc lamps B1.3:9

Argon (Ar) ion laser B1.3:11, D2.4:2

Arrhenius analysis F7:11

Arrival rate ratio A1.0:2

Arsine A2.2:1

As–As dimer D1.0:3

Aspect ratio C1.0:5, C1.0:6

Asperities D1.0:4

At rates B1.3:5

Atmospheric pressure glow discharge (APGD) E3.0:5, E3.0:30, E3.0:34

Atom diagnostics D0:2

Atomic absorption spectroscopy D0:3, D0:5, D0:6

Atomic arrangement of the surface D1.0:1

Atomic beams A2.0:1

Atomic bond energy F7:5

Atomic configurations D0:4

Atomic diffusion F7:8

Atomic intermixing F7:3

Atomic layer epitaxy A2.0:1

Atomic scattering factors F5:1, F5:2

Atomically abrupt interfaces A2.2:17

Auger electron spectroscopy (AES) D0:6

Automation A4.1:8

Available wavelength B1.3:11

Avalanche photodiodes F6.2:1

Average ion energy A1.4:2

Backscattering C1.0:8

Baffled furnace sources A1.1:4

Balanced and unbalanced magnetron fields A3.2:9

Bandgap D0:2, D0:3, D0:9, D2.4:1, D2.4:2

energy D2.4:7

engineering F6.0:11

Band-to-band transition D2.4:1, D2.4:5

Bar sources A1.1:4

Barriers to incorporation D1.0:7

Basic sections A1.2:1

Be dopant A2.3:6

Bias sputtering A3.0:1

Bia...

Cover Page
Title Page
Copyright Page
X3.2 ZnO
X3.5 TiO2
In2O3:Sn
X3.7 Ga2O3-In2O3
X3.8 ZrO2
X3.9 ZrOxFy
X3.10 CeO2
X3.11 CaF2
X3.12 MgF2
X3.13 MgO
X3.14 VO2
X3.15 a-C:O:H
X3.16 SiO2
X3.17 Ta2O5
X3.18 SiO2/Si3N4/TiO2/Ag
X3.19 Cr/Si3N4
X3.20 HfO2
Appendix A: List of Contributors
Index