Handbook of Solid-State Lighting and LEDs

Zhe Chuan Feng

• Publisher: CRC Press
• Year: 2017
• ISBN:
  9781351647649
• Edition: 1
• Topic: Sciences physiques
• Subtopic: Matière condensée

This handbook addresses the development of energy-efficient, environmentally friendly solid-state light sources, in particular semiconductor light emitting diodes (LEDs) and other solid-state lighting devices. It reflects the vast growth of this field and impacts in diverse industries, from lighting to communications, biotechnology, imaging, and medicine. The chapters include coverage of nanoscale processing, fabrication of LEDs, light diodes, photodetectors and nanodevices, characterization techniques, application, and recent advances. Readers will obtain an understanding of the key properties of solid-state lighting and LED devices, an overview of current technologies, and appreciation for the challenges remaining. The handbook will be useful to material growers and evaluators, device design and processing engineers, newcomers, students, and professionals in the field.

VI

Novel Technologies and Developments

19III-Nitride Semiconductor LEDs Grown on Silicon and Stress Control of GaN Epitaxial Layers Baijun Zhang and Yang Liu

Introduction • III-Nitride Semiconductor LEDs Grown on Silicon • Stress Control of GaN Epi-Materials Grown on Silicon • Summary • References

20Hole Accelerator for III-Nitride Light-Emitting Diodes Zi-Hui Zhang, Yonghui Zhang, Xiao Wei Sun, and Wengang Bi

Introduction • Device Architectures and Physical Parameters • Physical Parameter Justification • Impact of the AlN Composition on the LED Performance • Impact of the p-GaN Layer (L3) Thickness on the LED Performance • Impact of the p-Al_xGa_1−xN Layer (L2) Thickness on the LED Performance • Conclusions and Future Outlooks • Acknowledgment • References

21Metalorganic Chemical Vapour Deposition (MOCVD) Growth of GaN on Foundry Compatible 200 mm Si Li Zhang, Kenneth E. Lee, Eugene A. Fitzgerald, and Soo Jin Chua

Introduction • Literature Review of GaN-on-Si Platform • III-Nitride MOCVD Growth on 200 mm Si • Conclusion and Outlook • References

22Terahertz Spectroscopy Study of III–V Nitrides Xinhai Zhang and Huafeng Shi

Introduction • Terahertz Spectroscopy • THz Spectroscopy Study of III–V Nitride Materials • References

23Internal Luminescence Mechanisms of III-Nitride LEDs Shijie Xu

Introduction • Experimental Results and Discussions • Conclusions • Acknowledgments • References

24Fabrication of Thin-Film Nitride-Based Light-Emitting Diodes Ray-Hua Horng, Dong-Sing Wuu, and Chia-Feng Lin

Introduction • Thin-Film GaN LEDs • References

19
III-Nitride Semiconductor LEDs Grown on Silicon and Stress Control of GaN Epitaxial Layers

Baijun Zhang

School of Electronics and Information Technology

Yang Liu

School of Electronics and Information Technology

19.1Introduction

19.2III-Nitride Semiconductor LEDs Grown on Silicon

Basic Structure • Nitride Thin-Film LEDs Transferred from Native Silicon Substrate • GaN-Based LEDs with III-Nitride-Distributed Bragg Reflector Grown on a Silicon Substrate

19.3Stress Control of GaN Epi-Materials Grown on Silicon

Stress Engineering Layers • Growth on Patterned Si Substrate • Impurity Doping–Induced Stress

19.4Summary

References

AbstractGallium nitride (GaN)-based semiconductor materials and devices grown on silicon substrates are attractive due to their lower cost, larger wafer size, and better thermal conductivity in comparison with other substrates. The large wafer size of Si substrates can simply lower the fabrication process cost of GaN-based optoelectronic devices and electronic power devices. GaN-based LEDs grown on Si substrate suffer from low output efficiency due to the absorptive Si substrate. For III-nitride materials grown on silicon, the high stress that originates from the thermal mismatch between the epilayer and the substrate during the cooling down of the growth temperature is still a main problem. This chapter reviews certain key issues regarding the fabrication of optoelectronic devices and stress control in material growth.

19.1Introduction

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Table of contents

• Cover
• Halftitle Page
• Series Page
• Title Page
• Copyright Page
• Contents
• Preface
• Editor
• Contributors
• SECTION I Overview
• SECTION II GaN-Based LEDs for Lighting
• SECTION III Deep Ultraviolet LEDs and Related Technologies
• SECTION IV Laser Diodes
• SECTION V Nano and Other Types of LEDs
• SECTION VI Novel Technologies and Developments
• Index