Ultra-wide Bandgap Semiconductor Materials

Meiyong Liao, Bo Shen, Zhanguo Wang

• Publisher: Elsevier
• Year: 2019
• ISBN:
  9780128172568
• Topic: Technology & Engineering
• Subtopic: Materials Science
• Index: Technology & Engineering

Ultra-wide Bandgap Semiconductors (UWBG) covers the most recent progress in UWBG materials, including sections on high-Al-content AlGaN, diamond, B-Ga2O3, and boron nitrides. The coverage of these materials is comprehensive, addressing materials growth, physics properties, doping, device design, fabrication and performance. The most relevant and important applications are covered, including power electronics, RF electronics and DUV optoelectronics. There is also a chapter on novel structures based on UWBG, such as the heterojunctions, the low-dimensional structures, and their devices. This book is ideal for materials scientists and engineers in academia and R&D searching for materials superior to silicon carbide and gallium nitride.

• Provides a one-stop resource on the most promising ultra-wide bandgap semiconducting materials, including high-Al-content AlGaN, diamond, ß-Ga2O3, boron nitrides, and low-dimensional materials
• Presents comprehensive coverage, from materials growth and properties, to device design, fabrication and performance
• Features the most relevant applications, including power electronics, RF electronics and DUV optoelectronics

Table of contents

• Cover image
• Title page
• Table of Contents
• Copyright
• Contributors
• Preface
• Chapter 1: Al-rich AlGaN semiconductor materials and their device applications
• Chapter 2: Semiconductor diamond
• Chapter 3: Progress in semiconductor β-Ga2O3
• Chapter 4: Recent progress of boron nitrides
• Chapter 5: Nanostructures based on UWBG materials
• Index