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- 792 pages
- English
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About This Book
In this volume, the editor and contributors describe the use of molecular beam epitaxy (MBE) for a range of key materials systems that are of interest for both technological and fundamental reasons. Prior books on MBE have provided an introduction to the basic concepts and techniques of MBE and emphasize growth and characterization of GaAs-based structures. The aim in this book is somewhat different; it is to demonstrate the versatility of the technique by showing how it can be utilized to prepare and explore a range of distinct and diverse materials. For each of these materials systems MBE has played a key role both in their development and application to devices.
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Yes, you can access Molecular Beam Epitaxy by Robin F.C. Farrow in PDF and/or ePUB format, as well as other popular books in Technology & Engineering & Mining Engineering. We have over one million books available in our catalogue for you to explore.
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Table of contents
- Cover image
- Title page
- Table of Contents
- Copyright
- MATERIALS SCIENCE AND PROCESS TECHNOLOGY SERIES
- Preface
- Contributors
- Chapter 1: The Technology and Design of Molecular Beam Epitaxy Systems
- Chapter 2: Molecular Beam Epitaxy of High-Quality GaAs and AlGaAs
- Chapter 3: Gas-Source Molecular Beam Epitaxy: GaxIn1âxAs1-yPy/InP MBE with Non-elemental Sources. Heterostructures and Device Properties
- Chapter 4: Molecular Beam Epitaxy of Wide Gap II-VI Semiconductor Heterostructures
- Chapter 5: Elemental Semiconductor HeterostructuresâGrowth, Properties, and Applications
- Chapter 6: MBE Growth of High Tc Superconductors
- Chapter 7: MBE Growth of Artificially-Layered Magnetic Metal Structures
- Chapter 8: Reflection High Energy Electron Diffraction Studies of the Dynamics of Molecular Beam Epitaxy
- Index