SiC, Natural and Synthetic Diamond and Related Materials
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SiC, Natural and Synthetic Diamond and Related Materials

  1. 392 pages
  2. English
  3. PDF
  4. Available on iOS & Android
eBook - PDF

SiC, Natural and Synthetic Diamond and Related Materials

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Table of contents
Citations

About This Book

This volume addresses the burgeoning field of wide band gap materials. The 64 contributed and invited papers will do much to stimulate the well-justified ongoing work, both theoretical and experimental, in this area. The high standard of the papers attests to the significant progress that has been made in this field, as well as reporting on the challenging problems that still remain to be solved.

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Yes, you can access SiC, Natural and Synthetic Diamond and Related Materials by A.A. Gippius,R. Helbig,J.P.F. Sellschop in PDF and/or ePUB format, as well as other popular books in Physical Sciences & Physical & Theoretical Chemistry. We have over one million books available in our catalogue for you to explore.

Information

Publisher
North Holland
Year
1992
ISBN
9780444596772
Topic
Physical Sciences
Subtopic
Physical & Theoretical Chemistry

Table of contents

  1. Front Cover
  2. SiC, Natural and Synthetic Diamond and Related Materials
  3. Copyright Page
  4. Table of Contents
  5. Preface
  6. Sponsors
  7. Acknowledgments
  8. Chapter 1. Preparation and optical properties of wide gap IIā€“VI compounds
  9. Chapter 2. Optical bestability in IIā€“VI compounds
  10. Chapter 3. Optical studies of donors and acceptors in cubic SiC
  11. Chapter 4. Electron spin resonance studies of transition metal deep level impurities in SiC
  12. Chapter 5. Characterization of 3C-SiC epilayers by pulsed electron spin resonance
  13. Chapter 6. Electron paramagnetic resonance study of new centres in SiC
  14. Chapter 7. Measurement of electro-optical properties of Ī²-SiC on sapphir esubstrates and free-standing films
  15. Chapter 8. Interdiffusion in amorphous Si/SiC multilayers
  16. Chapter 9. Optical absorption coefficients in a-Si1ā€“x Cx:H
  17. Chapter 10. Short-range order in hydrogenated amorphous Siā€“C alloys studied by extended X-ray absorption fine structure
  18. Chapter 11. A computational study into the origin of SiC polytypes
  19. Chapter 12. Composition and structure of epitaxial Ī²-SiC films grown by reactive magnetron sputtering on Si(100) substrates
  20. Chapter 13. Influence of deposition parameters on the properties of SiC films
  21. Chapter 14. Influence of surface energy on the growth of 6H-and 4H-SiC polytypes by sublimation
  22. Chapter 15. Stress modification and characterization of thin SiC films grown byplasma-enhanced chemical vapour deposition
  23. Chapter 16. Preparation of crystalline SiC thin films by plasma-enhanced chemical vapour deposition and by ion beam modification of silicon
  24. Chapter 17. Growth and properties of CVDā€“SiC layers using tetramethylsilane
  25. Chapter 18. SiC and TaC as optical materials
  26. Chapter 19. Growth of SiC on silicon in a low pressure vertical reactor
  27. Chapter 20. Electronic structure of laser-synthesized SiC by photoelectron and soft X-ray spectroscopy
  28. Chapter 21. SiC bipolar devices
  29. Chapter 22. Fabrication of SiC epitaxial structures for devices by the method of sublimation in an open system
  30. Chapter 23. Applications of SiC thin films in low temperature devices
  31. Chapter 24. Ī±-SiC buried-gate junction field effect transistors
  32. Chapter 25. Chemical vapor deposition of Ī² -SiC on silicon-on-sapphire and silicon-on-insulator substrates
  33. Chapter 26. Characterization studies of low pressure chemical vapour deposition SICARB layers for wide band gap emitters
  34. Chapter 27. Electron channelling radiation: first steps towards a bright and tunable X-ray source
  35. Chapter 28. Prospects for new applications of diamond produced by stable andmetastable synthesis
  36. Chapter 29. Hard-photon emission and shower formation when multigiga-electronvolt electrons penetrate single crystals near axial directions: strong-field effects
  37. Chapter 30. Applications exploiting the extreme properties of diamonds
  38. Chapter 31. Polycrystalline diamond for optical thin films
  39. Chapter 32. High energy ion implantation into diamond and cubic boron nitride
  40. Chapter 33. Limits to diamond and diamond-like material properties produced under metastable conditions
  41. Chapter 34. Limits to quality and size of diamond and cubic boron nitrid esynthesized under high pressure, high temperature conditions
  42. Chapter 35. Megaelectronvolt ion irradiation effects in amorphous carbon: the roles of the Cā€”C and Cā€”C bonds
  43. Chapter 36. Theoretical status of diamond and its defects, excited state sand atomic motion
  44. Chapter 37. Materials modification: doping of diamond by ion implantation
  45. Chapter 38. The fate of implanted 19F ions in diamond and their theoretical modelling
  46. Chapter 39. Diamond and diamond simulants as studied by micro-Raman spectroscopy
  47. Chapter 40. Electron and nuclear structural characterization of natural, synthetic, homoepitaxial and polycrystalline low pressure chemically vapour-deposited diamond
  48. Chapter 41. Ion beam studies of the static and dynamic properties of dopants in diamond
  49. Chapter 42. Diamond electronic devicesā€”can they outperform silicon or GaAs?
  50. Chapter 43. Theory of native defects, doping and diffusion in diamond and silicon carbide
  51. Chapter 44. p -Type semiconducting structures in diamond implanted with boron ions
  52. Chapter 45. Metallurgical study of SiC-NiCr plasma-sprayed coatings
  53. Chapter 46. One-electron states induced by 3d transition metal impurities in diamond
  54. Chapter 47. Plasma-enhanced chemical vapour deposition of SiC layers using a liquid source
  55. Chapter 48. Effects of surface etching before metal contact formation on carbon/diamond-silicon heterojunction diode characteristics
  56. Chapter 49. On the fracture statistics of polycrystalline a-SiC at room and high temperature
  57. Chapter 50. Electronic properties of disordered SiC materials
  58. Chapter 51. Temperature dependence of the electric field gradient parameters at 19F lattice sites in semiconducting and insulating diamonds
  59. Chapter 52. Influence of silicon on the physical properties of diamond-like films
  60. Chapter 53. Epitaxially grown Ī²-SiC on Si(100) and Si(111) substrates by low pressure chemical vapour deposition
  61. Chapter 54. Diamond-like carbon films deposited in a dual microwaveā€“radio-frequency plasma
  62. Chapter 55. Transmission electron microscopy studies of dislocation mechanisms in as-sintered Ī±-SiC and after creep experiments at high temperature
  63. Chapter 56. Epitaxial growth of diamond-like films on Si(100) by pulsed-laser evaporation of graphite
  64. Chapter 57. The 2.526 eV luminescence band in diamond
  65. Chapter 58. Study of the growth mechanisms of amorphous carbon films by isotopic tracing methods
  66. Chapter 59. Thermal conductivity measurements of synthetic diamond films using the photothermal beam deflection technique
  67. Chapter 60. Raman spectra and electrical conductivity of glassy carbon
  68. Chapter 61. Nitrogen-containing defects in diamond: experimental data and molecular orbital linear-combination-of-atomic-orbitals
  69. Chapter 62. Scanning tunnelling microscopy studies of diamond-like films prepared by laser ablation
  70. Chapter 63. Picosecond optical measurements of the properties of heavily carbon-implanted silicon
  71. Author Index
  72. Subject Index