Semiconductor Devices

Physics and Technology

Simon M. Sze, Ming-Kwei Lee

• Publisher: Wiley
• Year: 2012
• ISBN:
  9781118139837
• Edition: 3
• Topic: Tecnologia e ingegneria
• Subtopic: Ingegneria elettronica e telecomunicazioni

The awaited revision of Semiconductor Devices: Physics and Technology offers more than 50% new or revised material that reflects a multitude of important discoveries and advances in device physics and integrated circuit processing. Offering a basic introduction to physical principles of modern semiconductor devices and their advanced fabrication technology, the third edition presents students with theoretical and practical aspects of every step in device characterizations and fabrication, with an emphasis on integrated circuits. Divided into three parts, this text covers the basic properties of semiconductor materials, emphasizing silicon and gallium arsenide; the physics and characteristics of semiconductor devices bipolar, unipolar special microwave and photonic devices; and the latest processing technologies, from crystal growth to lithographic pattern transfer.

Table of contents

• Cover
• Title Page
• Copyright
• Contents
• Preface
• Acknowledgments
• CHAPTER 0: Introduction
• PART I: SEMICONDUCTOR PHYSICS
• PART II: SEMICONDUCTOR DEVICES
• PART III: SEMICONDUCTOR TECHNOLOGY
• APPENDIX A: List of Symbols
• APPENDIX B: International Systems of Units (SI Units)
• APPENDIX C: Unit Prefixes
• APPENDIX D: Greek Alphabet
• APPENDIX E: Physical Constants
• APPENDIX F: Properties of Important Element and Binary Compound Semiconductors at 300 K
• APPENDIX G: Properties of Si and GaAs at 300 K
• APPENDIX H: Derivation of the Density of States in a Semiconductor
• APPENDIX I: Derivation of Recombination Rate for Indirect Recombination
• APPENDIX J: Calculation of the Transmission Coefficient for a Symmetric Resonant-Tunneling Diode
• APPENDIX K: Basic Kinetic Theory of Gases
• APPENDIX L: Answers to Selected Problems
• Photo credits
• Index