Deep Implants: Fundamentals and Applications
eBook - PDF

Deep Implants: Fundamentals and Applications

  1. 292 pages
  2. English
  3. PDF
  4. Only available on web
eBook - PDF

Deep Implants: Fundamentals and Applications

Book details
Table of contents
Citations

About This Book

Deep implants are produced by the high-energy implantation of impurities in a host material. The thus created subsurface layers have properties that are different from the very surface and the bulk and show great promise for application in the electronics industry.

Frequently asked questions

Simply head over to the account section in settings and click on “Cancel Subscription” - it’s as simple as that. After you cancel, your membership will stay active for the remainder of the time you’ve paid for. Learn more here.
At the moment all of our mobile-responsive ePub books are available to download via the app. Most of our PDFs are also available to download and we're working on making the final remaining ones downloadable now. Learn more here.
Both plans give you full access to the library and all of Perlego’s features. The only differences are the price and subscription period: With the annual plan you’ll save around 30% compared to 12 months on the monthly plan.
We are an online textbook subscription service, where you can get access to an entire online library for less than the price of a single book per month. With over 1 million books across 1000+ topics, we’ve got you covered! Learn more here.
Look out for the read-aloud symbol on your next book to see if you can listen to it. The read-aloud tool reads text aloud for you, highlighting the text as it is being read. You can pause it, speed it up and slow it down. Learn more here.
Yes, you can access Deep Implants: Fundamentals and Applications by G.G. Bentini,A. Golanski,S. Kalbitzer in PDF and/or ePUB format, as well as other popular books in Physical Sciences & Physics. We have over one million books available in our catalogue for you to explore.

Information

Publisher
North Holland
Year
1989
ISBN
9780444596376
Topic
Physical Sciences
Subtopic
Physics
Index
Physics

Table of contents

  1. Front Cover
  2. Deep Implants
  3. Copyright Page
  4. Table of Contents
  5. Chapter 1. Future very-large-scale integration technology
  6. Chapter 2. The δ doping layer: electronic properties and device perspectives
  7. Chapter 3. High temperature superconducting ceramics
  8. Chapter 4. Megaelectronvolt implantations in silicon very-large-scale integration
  9. Chapter 5. High energy implanted transistor fabrication
  10. Chapter 6. Dynamic computer simulation of high energy ion implantation
  11. Chapter 7. Lupin-3D: a three-dimensional calculation of damage energy distribution and cascade parameters for ion-implanted materials
  12. Chapter 8. Monte carlo simulations of ion implantation in crystalline targets
  13. Chapter 9. Interaction of megaelectronvolt ion beams with silicon: amorphization, recrystallization and diffusion
  14. Chapter 10. Depth distributions of megaelectronvolt 14N implanted into various solids at elevated fluences
  15. Chapter 11. Experimental and calculated range moments of deep implants
  16. Chapter 12. Depth profiles and damage annealing of 1.06 MeV As2+ implanted in silicon
  17. Chapter 13. Implants of 15–50 MeV boron ions into silicon
  18. Chapter 14. Results of boron implantation into silicon diodes and metal–oxide–semiconductor gate-controlled turn-off thyristors
  19. Chapter 15. Beryllium-bombarded In0.53 Ga0.47As and InP Photocondutors with Response Times below 3 ps
  20. Chapter 16. Proton-irradiated silicon: complete electrical characterization of the induced dominant deep defects after long-term annealing
  21. Chapter 17. A study of the distribution of hydrogen and strain in proton-bombarded liquid-encapsulated Czochralski-grown GaAs by double-crystal X-ray diffraction and secondary ion mass spectrometry
  22. Chapter 18. Comparison between "intermediate"- and "heavy"-ion-bombardment-induced silicon amorphization at room temperature
  23. Chapter 19. Electronic properties of defects created by 1.6 GeV argon ions in silicon
  24. Chapter 20. Current status of the technology of silicon separated by implantation of oxygen
  25. Chapter 21. A silicon-on-insulator structure formed by implantation of megaelectronvolt oxygen
  26. Chapter 22. Non-destructive characterization of nitrogen-implanted silicon-on-insulator structures by spectroscopic ellipsometry
  27. Chapter 23. Deep implants by channeling implantation
  28. Chapter 24. Lattice damage and suicide formation by deep implantations into silicon
  29. Chapter 25. Growth of buried silicon nitride layers induced by fast thermal annealing of N2 + -implanted silicon substrates
  30. Chapter 26. Piezoresistive properties under hydrostatic pressure of silicon layers separated by oxygen implantation
  31. Chapter 27. Ion beam effects on polymers: the influence of energy loss and molecular parameters
  32. Chapter 28. Photoresist outgassing and carbonization during high energy ion implantation
  33. Chapter 29. Modifications by rare gas bombardment of aluminium nitride formed by direct implantation
  34. Chapter 30. Nitrogen implantation into metals: a numerical model to explain the high temperature shape of the nitrogen depth profile
  35. Chapter 31. Temperature and dose dependences of nitrogen implantation into iron
  36. Chapter 32. Investigation of the Ag–Si interface formed under simultaneous irradiation using a high energy ion beam
  37. Chapter 33. Thermal wave characterization of silicon which had been high energy ion implanted and furnace annealed
  38. Chapter 34. An approach to a new machine design for implantation at medium and high energies
  39. Chapter 35. ARAMIS: an accelerator for research on astrophysics, microanalysis and implantation in solids
  40. Chapter 36. Linear-accelerator-based high energy implanter with milliampere capability
  41. Chapter 37. Design study of high energy, high current, r.f. accelerators for ion implantation
  42. Chapter 38. The Dynamitron tandem accelerator—a useful tool for ion beam applications
  43. Chapter 39. Features and applications of a versatile megavolt ion accelerator
  44. Chapter 40. Megaelectronvolt implants into GaAs using a hot-cathode Penning ion source
  45. Author Index
  46. Subject Index