- 370 pages
- English
- PDF
- Only available on web
About This Book
Silicon Integrated Circuits, Part 2 covers some of the most promising approaches along with the new understanding of processing-related areas of physics and chemistry. The first chapter is about the transient thermal processing of silicon, including annealing with directed-energy beams and rapid isothermal annealing; adiabatic annealing with laser and electron beams; pulsed melting; thermal flux annealing; rapid isothermal annealing; and several applications stemming from rapid annealing and semiconductor processing with directed-energy beams. The second chapter is concerned with the use of electron cyclotron resonance plasmas in two important materials processing techniques: reactive ion-beam etching and plasma deposition. The last chapter of the book deals with the exploding area of very large scale integration processing and process simulation. Physicists, chemists, and engineers involved in silicon integrated circuits will find the book invaluable.
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Table of contents
- Front Cover
- Silicon Integrated Circuits
- Copyright Page
- Table of Contents
- List of Contributors
- Preface
- Chapter 1. Transient Thermal Processing of Silicon
- Chapter 2. Reactive Ion-Beam Etching and Plasma Deposition Techniques Using Electron Cyclotron Resonance Plasmas
- Chapter 3. Physics of VLSI Processing and Process Simulation
- Author Index
- Subject Index