- 238 pages
- English
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Introduction To Semiconductor Device Modelling
About This Book
This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
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Table of contents
- CONTENTS
- PREFACE
- SYMBOLS
- CHAPTER 1 INTRODUCTION
- CHAPTER 2 SEMICONDUCTOR CARRIER TRANSPORT EQUATIONS
- CHAPTER 3 SOLUTION OF THE SEMICONDUCTOR EQUATIONS CLOSED-FORM ANALYTICAL MODELS
- CHAPTER 4 NUMERICAL SOLUTION OF THE SEMICONDUCTOR EQUATIONS THE FINITE-DIFFERENCE METHOD
- CHAPTER 5 NUMERICAL SOLUTION OF THE SEMICONDUCTOR EQUATION FINITE-ELEMENT METHODS
- CHAPTER 6 SEMICLASSICAL TRANSPORT EQUATIONS HOT ELECTRON EFFECTS
- CHAPTER 7 SIMULATION OF HETEROJUNCTION DEVICES
- CHAPTER 8 THE MONTE CARLO METHOD
- CHAPTER 9 QUANTUM MECHANICAL EFFECTS AN INTRODUCTION TO QUANTUM TRANSPORT THEORY
- APPENDIX 1 NUMERICAL SOLUTION OF THE CURRENT CONTINUITY EQUATION
- INDEX