Introduction to Magnetic Random-Access Memory
eBook - ePub

Introduction to Magnetic Random-Access Memory

  1. English
  2. ePUB (mobile friendly)
  3. Available on iOS & Android
eBook - ePub

Introduction to Magnetic Random-Access Memory

Book details
Table of contents
Citations

About This Book

Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in terms of nonvolatility, low energy dissipation, fast switching speed, radiation hardness, and durability. Although toggle-MRAM is currently a commercial product, it is clear that future developments in MRAM will be based on spin-transfer torque, which makes use of electrons' spin angular momentum instead of their charge. MRAM will require an amalgamation of magnetics and microelectronics technologies. However, researchers and developers in magnetics and in microelectronics attend different technical conferences, publish in different journals, use different tools, and have different backgrounds in condensed-matter physics, electrical engineering, and materials science.

This book is an introduction to MRAM for microelectronics engineers written by specialists in magnetic materials and devices. It presents the basic phenomena involved in MRAM, the materials and film stacks being used, the basic principles of the various types of MRAM (toggle and spin-transfer torque; magnetized in-plane or perpendicular-to-plane), the back-end magnetic technology, and recent developments toward logic-in-memory architectures. It helps bridge the cultural gap between the microelectronics and magnetics communities.

Frequently asked questions

Simply head over to the account section in settings and click on “Cancel Subscription” - it’s as simple as that. After you cancel, your membership will stay active for the remainder of the time you’ve paid for. Learn more here.
At the moment all of our mobile-responsive ePub books are available to download via the app. Most of our PDFs are also available to download and we're working on making the final remaining ones downloadable now. Learn more here.
Both plans give you full access to the library and all of Perlego’s features. The only differences are the price and subscription period: With the annual plan you’ll save around 30% compared to 12 months on the monthly plan.
We are an online textbook subscription service, where you can get access to an entire online library for less than the price of a single book per month. With over 1 million books across 1000+ topics, we’ve got you covered! Learn more here.
Look out for the read-aloud symbol on your next book to see if you can listen to it. The read-aloud tool reads text aloud for you, highlighting the text as it is being read. You can pause it, speed it up and slow it down. Learn more here.
Yes, you can access Introduction to Magnetic Random-Access Memory by Bernard Dieny, Ronald B. Goldfarb, Kyung-Jin Lee in PDF and/or ePUB format, as well as other popular books in Ciencias físicas & Materia condensada. We have over one million books available in our catalogue for you to explore.

Information

Year
2016
ISBN
9781119079446

Table of contents

  1. Cover
  2. Series Page
  3. Title Page
  4. Copyright
  5. About the Editors
  6. Preface: A Perspective on Nonvolatile Magnetic Memory Technology
  7. Chapter 1: Basic Spintronic Transport Phenomena
  8. Chapter 2: Magnetic Properties of Materials for MRAM
  9. Chapter 3: Micromagnetism Applied to Magnetic Nanostructures
  10. Chapter 4: Magnetization Dynamics
  11. Chapter 5: Magnetic Random-Access Memory
  12. Chapter 6: Magnetic Back-End Technology
  13. Chapter 7: Beyond MRAM: Nonvolatile Logic-In-Memory VLSI
  14. Appendix: Units for Magnetic Properties
  15. Index
  16. End User License Agreement